High-rate deposition of amorphous silicon films using hot-wire CVD with a coil-shaped filament
نویسندگان
چکیده
To reduce the manufacturing cost of amorphous silicon (a-Si:H)-based photovoltaic devices, it is important to deposit highquality a-Si:H and related materials at a high deposition rate. To this end, we designed and constructed a hot-wire deposition chamber with a coiled filament design and with multiple gas inlets. The process gas could be directed into the chamber through the filament coil and have maximum exposure to the high-temperature filament surface. Using such a chamber design, we deposited a-Si:H films at high deposition rates up to 800 A s and dense, low-void a-Si:H at rates up to 240 A s . y1 y1 ̊ ̊ 2003 Elsevier Science B.V. All rights reserved.
منابع مشابه
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